General purpose optocoupler featuring a phototransistor output in a 6-pin DIP package. Offers a high 400mV Collector Emitter Voltage (VCEO) and 400mV Collector Emitter Saturation Voltage. Achieves a 320% Current Transfer Ratio with a maximum output current of 50mA per channel. Operates with DC input and a maximum forward current of 60mA, suitable for through-hole mounting. Rated for 250mW power dissipation and a wide operating temperature range of -40°C to 100°C.
PackageDIP
MountingThrough Hole
Power250mW
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Technical Specifications
Onsemi CNY17F4VM technical specifications.
General
| Package/Case | DIP |
| Collector Emitter Saturation Voltage | 400mV |
| Collector Emitter Voltage (VCEO) | 400mV |
| Collector-emitter Voltage-Max | 400mV |
| Contact Plating | Tin, Matte |
| Current Transfer Ratio | 320% |
| Fall Time | 24000ns |
| Forward Current | 60mA |
| Input Type | DC |
| Max Collector Current | 50mA |
| Max Input Current | 60mA |
| Max Operating Temperature | 100°C |
| Min Operating Temperature | -40°C |
| Max Output Voltage | 70V |
| Max Power Dissipation | 250mW |
| Mount | Through Hole |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Output Current per Channel | 50mA |
| Package Quantity | 1000 |
| Packaging | Bulk |
| Power Dissipation | 250mW |
| Reverse Breakdown Voltage | 6V |
| RoHS Compliant | Yes |
| Weight | 0.855g |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi CNY17F4VM Datasheet
Download the complete datasheet for Onsemi CNY17F4VM to view detailed technical specifications.
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