N-Channel Power MOSFET, 500V Vdss, 2.5A continuous drain current, and 3 Ohm drain-source resistance. Features include 8ns turn-on delay, 33ns turn-off delay, and 16ns fall time. This silicon Metal-oxide Semiconductor FET operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 50W. Packaged in TO-262-3 for through-hole mounting, it is RoHS compliant and lead-free.
PackageTO-262-3
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Vishay IRF820LPBF technical specifications.
General
| Package/Case | TO-262-3 |
| Continuous Drain Current (ID) | 2.5A |
| Drain to Source Resistance | 3R |
| Drain to Source Voltage (Vdss) | 500V |
| Fall Time | 16ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 9.01mm |
| Input Capacitance | 360pF |
| Lead Free | Lead Free |
| Length | 10.41mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 50W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 3R |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 33ns |
| Turn-On Delay Time | 8ns |
| Weight | 0.211644oz |
| Width | 4.7mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay IRF820LPBF Datasheet
Download the complete datasheet for Vishay IRF820LPBF to view detailed technical specifications.
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