N-Channel Power MOSFET, 500V Vdss, 2.5A continuous drain current, and 3 Ohm Rds On. This silicon Metal-oxide Semiconductor FET features a TO-263AB package for surface mounting, with a maximum power dissipation of 50W. Key switching characteristics include an 8ns turn-on delay and a 16ns fall time, with input capacitance at 360pF. Operating temperature range spans from -55°C to 150°C.
PackageD2PAK
Current Rating2.5A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay IRF820S technical specifications.
General
| Package/Case | D2PAK |
| Continuous Drain Current (ID) | 2.5A |
| Current Rating | 2.5A |
| Drain to Source Resistance | 3R |
| Drain to Source Voltage (Vdss) | 500V |
| Fall Time | 16ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 4.83mm |
| Input Capacitance | 360pF |
| Lead Free | Contains Lead |
| Length | 10.67mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 50W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Rds On Max | 3R |
| RoHS Compliant | No |
| Turn-Off Delay Time | 33ns |
| Turn-On Delay Time | 8ns |
| DC Rated Voltage | 500V |
| Weight | 0.050717oz |
| Width | 9.65mm |
Compliance
| RoHS | Not Compliant |
Datasheet
Vishay IRF820S Datasheet
Download the complete datasheet for Vishay IRF820S to view detailed technical specifications.
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