N-Channel Power MOSFET, 500V Vdss, 2.5A continuous drain current, and 3 Ohm Rds On. This silicon Metal-oxide Semiconductor FET features a D2PAK surface mount package with a maximum power dissipation of 3.1W. It offers fast switching speeds with an 8ns turn-on delay and 33ns turn-off delay, and operates within a temperature range of -55°C to 150°C. The component is RoHS compliant and supplied in tape and reel packaging.
PackageD2PAK
MountingSurface Mount
PolarityN-CHANNEL
Power3.1W
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Technical Specifications
Vishay IRF820STRRPBF technical specifications.
General
| Package/Case | D2PAK |
| Continuous Drain Current (ID) | 2.5A |
| Drain to Source Resistance | 3R |
| Drain to Source Voltage (Vdss) | 500V |
| Fall Time | 16ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 4.83mm |
| Input Capacitance | 360pF |
| Length | 10.67mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3.1W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 800 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 3.1W |
| Radiation Hardening | No |
| Rds On Max | 3R |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 33ns |
| Turn-On Delay Time | 8ns |
| Weight | 0.050717oz |
| Width | 9.65mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay IRF820STRRPBF Datasheet
Download the complete datasheet for Vishay IRF820STRRPBF to view detailed technical specifications.
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