
P-channel MOSFET with 100V drain-source voltage and 6.8A continuous drain current. Features 600mΩ drain-source on-resistance and 60W power dissipation. Operates from -55°C to 175°C, with a 20V gate-source voltage rating. Packaged in TO-220AB for through-hole mounting.
Vishay IRF9520 technical specifications.
| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 6.8A |
| Drain to Source Resistance | 600mR |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 600mR |
| Fall Time | 25ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 9.01mm |
| Input Capacitance | 390pF |
| Lead Free | Contains Lead |
| Length | 10.41mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 60W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | P-CHANNEL |
| Power Dissipation | 60W |
| Radiation Hardening | No |
| Rds On Max | 600mR |
| RoHS Compliant | No |
| Turn-Off Delay Time | 21ns |
| Turn-On Delay Time | 9.6ns |
| Weight | 0.211644oz |
| Width | 4.7mm |
| RoHS | Not CompliantNo |
Download the complete datasheet for Vishay IRF9520 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
