P-channel MOSFET for power applications, featuring a 100V drain-source voltage and 6.8A continuous drain current. This silicon metal-oxide semiconductor FET offers a low 0.6 ohm drain-source resistance and is packaged in a D2PAK surface-mount case. Key switching characteristics include a 9.6ns turn-on delay and 25ns fall time, with a maximum power dissipation of 60W.
PackageD2PAK
MountingSurface Mount
PolarityP-CHANNEL
Quick Jump:
Technical Specifications
Vishay IRF9520STRL technical specifications.
General
| Package/Case | D2PAK |
| Continuous Drain Current (ID) | 6.8A |
| Drain to Source Resistance | 600mR |
| Drain to Source Voltage (Vdss) | 100V |
| Fall Time | 25ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 4.83mm |
| Input Capacitance | 390pF |
| Lead Free | Contains Lead |
| Length | 10.67mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 60W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 800 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Rds On Max | 600mR |
| RoHS Compliant | No |
| Turn-Off Delay Time | 21ns |
| Turn-On Delay Time | 9.6ns |
| Weight | 0.050717oz |
| Width | 9.65mm |
Compliance
| RoHS | Not Compliant |
Datasheet
Vishay IRF9520STRL Datasheet
Download the complete datasheet for Vishay IRF9520STRL to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
