N-channel Silicon Field-Effect Transistor (FET) designed for small signal applications. Features a 100V drain-to-source breakdown voltage and a continuous drain current of 1A. Offers a maximum drain-source on-resistance of 540mΩ. Operating temperature range spans from -55°C to 175°C with a power dissipation of 1.3W. Packaged in a TO-250AA (HEXDIP-4) through-hole mount configuration.
PackageDIP
Current Rating1A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Vishay IRFD110 technical specifications.
General
| Package/Case | DIP |
| Continuous Drain Current (ID) | 1A |
| Current Rating | 1A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 540mR |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 540mR |
| Fall Time | 16ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 180pF |
| Lead Free | Contains Lead |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.3W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 2500 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 1.3W |
| Radiation Hardening | No |
| Rds On Max | 540mR |
| RoHS Compliant | No |
| Turn-Off Delay Time | 15ns |
| Turn-On Delay Time | 6.9ns |
| DC Rated Voltage | 100V |
Compliance
| RoHS | Not CompliantNo |
Datasheet
Vishay IRFD110 Datasheet
Download the complete datasheet for Vishay IRFD110 to view detailed technical specifications.
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