N-Channel Power MOSFET with 200V Drain-Source Voltage (Vdss) and 30A Continuous Drain Current (ID). Features low 85mR Drain-to-Source Resistance and 190W Max Power Dissipation. Operates from -55°C to 150°C, with fast switching speeds including 16ns Turn-On Delay and 62ns Fall Time. Packaged in a TO-247-3 through-hole mount, this component is designed for demanding power applications.
PackageTO-247-3
MountingThrough Hole
PolarityN-CHANNEL
Power190W
Quick Jump:
Technical Specifications
Vishay IRFP250 technical specifications.
General
| Package/Case | TO-247-3 |
| Continuous Drain Current (ID) | 30A |
| Drain to Source Resistance | 85mR |
| Drain to Source Voltage (Vdss) | 200V |
| Fall Time | 62ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 20.7mm |
| Lead Free | Lead Free |
| Length | 15.87mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 190W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 500 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 190W |
| Radiation Hardening | No |
| RoHS Compliant | No |
| Turn-Off Delay Time | 70ns |
| Turn-On Delay Time | 16ns |
| Weight | 1.340411oz |
| Width | 5.31mm |
Compliance
| RoHS | Not CompliantNo |
Datasheet
Vishay IRFP250 Datasheet
Download the complete datasheet for Vishay IRFP250 to view detailed technical specifications.
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