International Rectifier
IRF7341TR
Power Field-Effect Transistor, 5.1A I(D), 55V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SOP-8
Power Field-Effect Transistor, 5.1A I(D), 55V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SOP-8
PackageSOIC
Quick Jump:
Technical Specifications
International Rectifier IRF7341TR technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 4.7A |
| Drain to Source Voltage (Vdss) | 55V |
| RoHS Compliant | No |
Compliance
| RoHS | Not Compliant |
Datasheet
International Rectifier IRF7341TR Datasheet
Download the complete datasheet for International Rectifier IRF7341TR to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
