This unidirectional silicon TVS diode features a breakdown voltage range of 8.645 to 9.555V and a maximum power dissipation of 5W. The device has a single terminal with an upper position and a pin count of 1. It is constructed from a single element and is suitable for transient voltage suppression applications. The O-MUPM-X1 package type is used for this component.
PolarityUNIDIRECTIONAL
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Technical Specifications
Solid State Devices ST1000B9.1VTX technical specifications.
General
| Number of Terminals | 1 |
| Terminal Position | UPPER |
| Pin Count | 1 |
| Number of Elements | 1 |
| Polarity | UNIDIRECTIONAL |
| Diode Element Material | SILICON |
| Diode Type | TRANS VOLTAGE SUPPRESSOR DIODE |
| Rep Pk Reverse Voltage-Max | 7.5 |
| Breakdown Voltage-Min | 8.645 |
| Non-rep Peak Rev Power Dis-Max | 1000 |
| Breakdown Voltage-Max | 9.555 |
| Power Dissipation-Max | 5 |
Compliance
| Eccn Code | EAR99 |
| HTS Code | 8541.10.00.50 |
| REACH | Compliant |
| Military Spec | True |
Datasheet
Solid State Devices ST1000B9.1VTX Datasheet
Download the complete datasheet for Solid State Devices ST1000B9.1VTX to view detailed technical specifications.
No datasheet is available for this part.