256Mbit Mobile SDRAM chip, organized as 16Mx16, features a 16-bit data bus and a 15-bit address bus. Operating at a maximum clock rate of 143 MHz, this DRAM component offers 4 internal banks, each with 4M words. Packaged in a 60-pin FBGA with surface mount technology, it operates from a 2.3V to 2.9V supply, with a typical voltage of 2.5V. Performance is characterized by maximum access times of 19, 6, or 5.4 ns, and it functions within an operating temperature range of -40°C to 85°C.
Promos Technologies V55C2256164VBLJ7I technical specifications.
| Basic Package Type | Ball Grid Array |
| Package Family Name | BGA |
| Package/Case | FBGA |
| Package Description | Fine Pitch Ball Grid Array |
| Lead Shape | Ball |
| Pin Count | 60 |
| PCB | 60 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Density | 256Mbit |
| Type | Mobile SDRAM |
| Organization | 16Mx16 |
| Data Bus Width | 16bit |
| Maximum Clock Rate | 143MHz |
| Number of Internal Banks | 4 |
| Number of Words per Bank | 4M |
| Maximum Access Time | 19|6|5.4ns |
| Density in Bits | 268435456bit |
| Address Bus Width | 15bit |
| Maximum Operating Current | 110mA |
| Typical Operating Supply Voltage | 2.5V |
| Max Operating Supply Voltage | 2.9V |
| Min Operating Supply Voltage | 2.3V |
| Min Operating Temperature | -40°C |
| Max Operating Temperature | 85°C |
| EU RoHS | Yes |
| HTS Code | 8542320024 |
| Schedule B | 8542320015 |
| ECCN | EAR99 |
| Radiation Hardening | No |
| RoHS Versions | 2002/95/EC |
Download the complete datasheet for Promos Technologies V55C2256164VBLJ7I to view detailed technical specifications.
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