The UJ3C065030B3 is a high-performance Silicon Carbide (SiC) FET based on a unique cascode circuit configuration. It co-packages a normally-on SiC JFET with a cascode-optimized Si MOSFET to create a normally-off SiC FET device. This architecture allows for standard gate-drive characteristics (0V to 12V), enabling it to serve as a drop-in replacement for Silicon IGBTs, Silicon FETs, and SiC MOSFETs. The device features ultra-low gate charge and exceptional reverse recovery characteristics, making it suitable for high-frequency switching and inductive load applications.
Temp Range-55 to 175°C
Quick Jump:
Technical Specifications
Qorvo UJ3C065030B3 technical specifications.
General
| Drain-Source Voltage (Vds) | 650V |
| Continuous Drain Current (Id) | 65A |
| Drain-Source On-Resistance (Rds(on)) Typ | 27mΩ |
| Drain-Source On-Resistance (Rds(on)) Max | 35mΩ |
| Gate-Source Voltage (Vgs) | ±25V |
| Total Gate Charge (Qg) | 51nC |
| Power Dissipation (Pd) | 242W |
| Operating Temperature Range | -55 to 175°C |
| Input Capacitance (Ciss) | 1500pF |
| Reverse Recovery Charge (Qrr) | 400nC |
Compliance
| RoHS | Compliant (RoHS 3) |
| REACH | Compliant |
| Halogen Free | Yes |
Datasheet
Qorvo UJ3C065030B3 Datasheet
Download the complete datasheet for Qorvo UJ3C065030B3 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.