High-reliability silicon mixer diode featuring a planar doped barrier technology. This DO-35 packaged RF diode offers a maximum forward voltage of 800mV and a maximum output current of 150mA. With a maximum diode capacitance of 3pF and a reverse recovery time of 0.003µs, it is designed for RF applications. The glass package with axial wire terminals ensures isolated case connection and operates up to 175°C.
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Technical Specifications
Renesas 1S2076A technical specifications.
General
| Additional Feature | HIGH RELIABILITY |
| Case Connection | Isolated |
| Diode Capacitance-Max | 3pF |
| Diode Element Material | SILICON |
| Diode Type | MIXER |
| Forward Voltage-Max (VF) | 800mV |
| JEDEC-95 Code | DO-35 |
| JESD-30 Code | O-LALF-W2 |
| JESD-609 Code | e0 |
| Max Operating Temperature | 175°C |
| Max Output Current | 150mA |
| Max Power Dissipation | 250mW |
| Number of Elements | 1 |
| Package Body Material | Glass |
| Package Shape | Round |
| Package Style | LONG FORMMeter |
| Qualification Status | Not Qualified |
| Rep Pk Reverse Voltage-Max | 70V |
| Reverse Recovery Time-Max | 0.003us |
| RoHS Compliant | No |
| Surface Mount | No |
| Technology | PLANAR DOPED BARRIER |
| Terminal Finish | Tin |
| Terminal Form | Wire |
| Terminal Position | AXIAL |
Compliance
| RoHS | Not Compliant |
Datasheet
Renesas 1S2076A Datasheet
Download the complete datasheet for Renesas 1S2076A to view detailed technical specifications.
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