High-reliability silicon mixer diode featuring a planar doped barrier technology. This DO-35 packaged RF diode offers a maximum forward voltage of 800mV and a maximum output current of 150mA. With a maximum diode capacitance of 3pF and a reverse recovery time of 0.003µs, it is designed for RF applications. The glass package with axial wire terminals ensures isolated case connection and operates up to 175°C.
Quick Jump:
Technical Specifications
Renesas 1S2076A technical specifications.
General
Additional Feature
HIGH RELIABILITY
Case Connection
Isolated
Diode Capacitance-Max
3pF
Diode Element Material
SILICON
Diode Type
MIXER
Forward Voltage-Max (VF)
800mV
JEDEC-95 Code
DO-35
JESD-30 Code
O-LALF-W2
JESD-609 Code
e0
Max Operating Temperature
175°C
Max Output Current
150mA
Max Power Dissipation
250mW
Number of Elements
1
Package Body Material
Glass
Package Shape
Round
Package Style
LONG FORMMeter
Qualification Status
Not Qualified
Rep Pk Reverse Voltage-Max
70V
Reverse Recovery Time-Max
0.003us
RoHS Compliant
No
Surface Mount
No
Technology
PLANAR DOPED BARRIER
Terminal Finish
Tin
Terminal Form
Wire
Terminal Position
AXIAL
Compliance
RoHS
Not Compliant
Datasheet
Renesas 1S2076A Datasheet
Download the complete datasheet for Renesas 1S2076A to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.