NPN Bipolar Junction Transistor (BJT) for surface mount applications. Features a 25V collector-emitter voltage, 2A continuous collector current, and 2000mW power dissipation. This single-element transistor is housed in a 4-pin SOT-89 (TO-243-AA) plastic package with flat leads. Key electrical characteristics include a minimum DC current gain of 400 at 2A/5V and a typical transition frequency of 350MHz. Operating temperature range is -55°C to 150°C.
PackageSOT-89
MountingSurface Mount
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Technical Specifications
Renesas 2SD1950(0)-T1-AZ technical specifications.
General
Basic Package Type
Lead-Frame SMT
Package Family Name
TO-243-AA
Package/Case
SOT-89
Package Description
Small Outline Transistor
Lead Shape
Flat
Pin Count
4
PCB
3
Tab
Tab
Package Length (mm)
4.5
Package Width (mm)
2.5
Package Height (mm)
1.5
Seated Plane Height (mm)
1.5
Pin Pitch (mm)
1.5
Package Material
Plastic
Mounting
Surface Mount
Type
NPN
Configuration
Single Dual Collector
Number of Elements per Chip
1
Maximum Collector Base Voltage
30V
Maximum Emitter Base Voltage
15V
Maximum Collector-Emitter Voltage
25V
Maximum DC Collector Current
2A
Maximum Power Dissipation
2000mW
Material
Si
Minimum DC Current Gain
400@2A@5V
Maximum Transition Frequency
350(Typ)MHz
Category
Bipolar Power
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
SAN34
EU RoHS
Yes with Exemption
HTS Code
8541290075
Schedule B
8541290080
ECCN
EAR99
Automotive
Yes
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Renesas 2SD1950(0)-T1-AZ Datasheet
Download the complete datasheet for Renesas 2SD1950(0)-T1-AZ to view detailed technical specifications.
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