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Technical Specifications
Renesas 2SJ186CYEL-E technical specifications.
General
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 200V |
| Maximum Gate Source Voltage | ±15V |
| Maximum Continuous Drain Current | 0.5A |
| Material | Si |
| Maximum Drain Source Resistance | 15000@10VmOhm |
| Typical Input Capacitance @ Vds | 75@10VpF |
| Maximum Power Dissipation | 1000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | SAN34 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
Datasheet
Renesas 2SJ186CYEL-E Datasheet
Download the complete datasheet for Renesas 2SJ186CYEL-E to view detailed technical specifications.
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