P-channel MOSFET transistor designed for switching applications. Features a maximum drain current of 8A and a drain-source breakdown voltage of 200V. This component offers a maximum power dissipation of 100W and operates within a temperature range of 150°C. Constructed with silicon and metal-oxide semiconductor technology, it is housed in a rectangular plastic package with through-hole terminals. The device is RoHS compliant and lead-free.
Current Rating-8A
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Technical Specifications
Renesas 2SJ352-E technical specifications.
General
| Case Connection | SOURCE |
| Current Rating | -8A |
| Drain Current-Max (Abs) (ID) | 8A |
| Drain Current-Max (ID) | 8A |
| DS Breakdown Voltage-Min | 200V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 Code | R-PSFM-T3 |
| JESD-609 Code | e2 |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Moisture Sensitivity Level | 1 |
| Number of Elements | 1 |
| Package Body Material | Plastic |
| Package Shape | Rectangular |
| Package Style | FLANGE MOUNTMeter |
| Polarity/Channel Type | P-CHANNEL |
| Power Dissipation-Max (Abs) | 100W |
| Qualification Status | Not Qualified |
| RoHS Compliant | Yes |
| Surface Mount | No |
| Terminal Finish | Copper |
| Terminal Form | Through Hole |
| Terminal Position | SINGLE |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| DC Rated Voltage | -200V |
Compliance
| RoHS | Compliant |
Datasheet
Renesas 2SJ352-E Datasheet
Download the complete datasheet for Renesas 2SJ352-E to view detailed technical specifications.
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