P-channel MOSFET transistor designed for switching applications. Features a maximum drain current of 500mA and a minimum drain-source breakdown voltage of 160V. Operates with a maximum power dissipation of 1.75W and a maximum operating temperature of 150°C. Packaged in a TO-220AB plastic case with through-hole mounting and copper terminals. RoHS compliant and moisture sensitivity level 1.
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Technical Specifications
Renesas 2SJ77-E technical specifications.
General
| Case Connection | SOURCE |
| Drain Current-Max (Abs) (ID) | 500mA |
| Drain Current-Max (ID) | 500mA |
| DS Breakdown Voltage-Min | 160V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 Code | TO-220AB |
| JESD-30 Code | R-PSFM-T3 |
| JESD-609 Code | e2 |
| Max Operating Temperature | 150°C |
| Moisture Sensitivity Level | 1 |
| Number of Elements | 1 |
| Package Body Material | Plastic |
| Package Shape | Rectangular |
| Package Style | FLANGE MOUNTMeter |
| Polarity/Channel Type | P-CHANNEL |
| Power Dissipation-Max (Abs) | 1.75W |
| Qualification Status | Not Qualified |
| RoHS Compliant | Yes |
| Surface Mount | No |
| Terminal Finish | Copper |
| Terminal Form | Through Hole |
| Terminal Position | SINGLE |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
Compliance
| RoHS | Compliant |
Datasheet
Renesas 2SJ77-E Datasheet
Download the complete datasheet for Renesas 2SJ77-E to view detailed technical specifications.
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