N-channel Silicon MOSFET for switching applications. Features a maximum drain current of 300mA and a minimum drain-source breakdown voltage of 60V. Offers a maximum drain-source on-resistance of 2.5 Ohms. Packaged in a TO-92 cylindrical plastic housing with through-hole terminals. RoHS and REACH SVHC compliant.
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Technical Specifications
Renesas 2SK1336-E technical specifications.
General
| Drain Current-Max (ID) | 300mA |
| Drain-source On Resistance-Max | 2.5R |
| DS Breakdown Voltage-Min | 60V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 Code | TO-92 |
| JESD-30 Code | O-PBCY-T3 |
| JESD-609 Code | e2 |
| Moisture Sensitivity Level | 1 |
| Number of Elements | 1 |
| Package Body Material | Plastic |
| Package Shape | Round |
| Package Style | CYLINDRICALMeter |
| Peak Reflow Temperature (Cel) | 260°C |
| Polarity/Channel Type | N-CHANNEL |
| Qualification Status | Not Qualified |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Surface Mount | No |
| Terminal Finish | Copper |
| Terminal Form | Through Hole |
| Terminal Position | BOTTOM |
| Time @ Peak Reflow Temperature-Max (s) | 20s |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
Compliance
| RoHS | Compliant |
Datasheet
Renesas 2SK1336-E Datasheet
Download the complete datasheet for Renesas 2SK1336-E to view detailed technical specifications.
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