N-channel MOSFET with a maximum drain-source breakdown voltage of 25V and a continuous drain current capability of 30A. Features a low on-resistance of 21mΩ maximum. This surface-mount component utilizes METAL-OXIDE SEMICONDUCTOR FET technology and is housed in a TO-252AA (R-PSSO-G2) package with gull-wing terminals. Designed for switching applications, it offers a maximum power dissipation of 21W and operates up to 150°C. RoHS and REACH SVHC compliant.
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Technical Specifications
Renesas 2SK4069-ZK-E2-AY technical specifications.
General
Case Connection
DRAIN
Drain Current-Max (Abs) (ID)
30A
Drain Current-Max (ID)
30A
Drain-source On Resistance-Max
21mR
DS Breakdown Voltage-Min
25V
FET Technology
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-252AA
JESD-30 Code
R-PSSO-G2
JESD-609 Code
e3
Max Operating Temperature
150°C
Number of Elements
1
Package Body Material
Plastic
Package Shape
Rectangular
Package Style
SMALL OUTLINEMeter
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (Abs)
21W
Qualification Status
Not Qualified
Reach SVHC Compliant
Yes
RoHS Compliant
Yes
Surface Mount
Yes
Terminal Finish
Tin
Terminal Form
Gull Wing
Terminal Position
SINGLE
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Compliance
RoHS
Compliant
Datasheet
Renesas 2SK4069-ZK-E2-AY Datasheet
Download the complete datasheet for Renesas 2SK4069-ZK-E2-AY to view detailed technical specifications.
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