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Technical Specifications
Renesas 3SK298 technical specifications.
General
| Additional Feature | LOW NOISE |
| Case Connection | SOURCE |
| Drain Current-Max (ID) | 25mA |
| DS Breakdown Voltage-Min | 12V |
| Feedback Cap-Max (Crss) | 0.04pF |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Highest Frequency Band | ULTRA HIGH FREQUENCY BAND |
| JESD-30 Code | R-PDSO-G4 |
| Number of Elements | 1 |
| Package Body Material | Plastic |
| Package Shape | Rectangular |
| Package Style | SMALL OUTLINEMeter |
| Polarity/Channel Type | N-CHANNEL |
| Qualification Status | Not Qualified |
| Surface Mount | Yes |
| Terminal Form | Gull Wing |
| Terminal Position | DUAL |
| Transistor Application | AMPLIFIER |
| Transistor Element Material | SILICON |
Compliance
| RoHS | Not Compliant |
Datasheet
Renesas 3SK298 Datasheet
Download the complete datasheet for Renesas 3SK298 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.