N-channel RF small signal MOSFET for UHF band applications. Features low noise and a maximum drain current of 20mA. Minimum DS breakdown voltage is 6V, with a maximum feedback capacitance of 0.03pF. This surface-mount device utilizes a metal-oxide semiconductor FET technology and is housed in a rectangular, small outline plastic package with gull-wing terminals. RoHS compliant with tin terminal finish, it is designed for amplifier applications.
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Technical Specifications
Renesas 3SK319YB-TL-E technical specifications.
General
| Additional Feature | LOW NOISE |
| Drain Current-Max (ID) | 20mA |
| DS Breakdown Voltage-Min | 6V |
| Feedback Cap-Max (Crss) | 0.03pF |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Highest Frequency Band | ULTRA HIGH FREQUENCY BAND |
| JESD-30 Code | R-PDSO-G4 |
| JESD-609 Code | e6 |
| Moisture Sensitivity Level | 1 |
| Number of Elements | 1 |
| Package Body Material | Plastic |
| Package Shape | Rectangular |
| Package Style | SMALL OUTLINEMeter |
| Peak Reflow Temperature (Cel) | 260°C |
| Polarity/Channel Type | N-CHANNEL |
| Qualification Status | Not Qualified |
| RoHS Compliant | Yes |
| Surface Mount | Yes |
| Terminal Finish | Tin |
| Terminal Form | Gull Wing |
| Terminal Position | DUAL |
| Time @ Peak Reflow Temperature-Max (s) | 20s |
| Transistor Application | AMPLIFIER |
| Transistor Element Material | SILICON |
Compliance
| RoHS | Compliant |
Datasheet
Renesas 3SK319YB-TL-E Datasheet
Download the complete datasheet for Renesas 3SK319YB-TL-E to view detailed technical specifications.
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