The 74HC123AP-E is a dual CMOS inverter with a propagation delay of 300ns and a quiescent current of 130uA. It operates over a temperature range of -40°C to 85°C and is available in a PDIP package. The device is suitable for use in a variety of applications, including those requiring high-speed logic functions. The 74HC123AP-E is a CMOS technology device, and it is not radiation hardened. It can operate with a supply voltage between 2V and 6V.
PackagePDIP
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Technical Specifications
Renesas 74HC123AP-E technical specifications.
General
| Package/Case | PDIP |
| High Level Output Current | -5.2mA |
| Low Level Output Current | 5.2mA |
| Max Operating Temperature | 85°C |
| Min Operating Temperature | -40°C |
| Max Supply Voltage | 6V |
| Min Supply Voltage | 2V |
| Number of Elements | 2 |
| Packaging | Rail/Tube |
| Propagation Delay | 300ns |
| Quiescent Current | 130uA |
| Radiation Hardening | No |
| Technology | CMOS |
Compliance
| RoHS | Compliant |
Datasheet
Renesas 74HC123AP-E Datasheet
Download the complete datasheet for Renesas 74HC123AP-E to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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