N-channel RF MOSFET for UHF band applications, featuring low noise performance and designed for amplifier circuits. This silicon transistor offers a maximum drain current of 20mA and a drain-source breakdown voltage of 6V minimum. It boasts a low feedback capacitance of 0.05pF maximum and operates within a temperature range up to 150°C. The component is housed in a plastic, rectangular small outline package with gull-wing terminals, suitable for surface mounting.
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Technical Specifications
Renesas BB503C technical specifications.
General
| Additional Feature | LOW NOISE |
| Drain Current-Max (Abs) (ID) | 20mA |
| Drain Current-Max (ID) | 20mA |
| DS Breakdown Voltage-Min | 6V |
| Feedback Cap-Max (Crss) | 0.05pF |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Highest Frequency Band | ULTRA HIGH FREQUENCY BAND |
| JESD-30 Code | R-PDSO-G4 |
| JESD-609 Code | e0 |
| Max Operating Temperature | 150°C |
| Number of Elements | 1 |
| Package Body Material | Plastic |
| Package Shape | Rectangular |
| Package Style | SMALL OUTLINEMeter |
| Peak Reflow Temperature (Cel) | 240°C |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 100mW |
| Qualification Status | Not Qualified |
| RoHS Compliant | No |
| Surface Mount | Yes |
| Terminal Finish | Tin |
| Terminal Form | Gull Wing |
| Terminal Position | DUAL |
| Transistor Application | AMPLIFIER |
| Transistor Element Material | SILICON |
Compliance
| RoHS | Not Compliant |
Datasheet
Renesas BB503C Datasheet
Download the complete datasheet for Renesas BB503C to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.