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Technical Specifications
Renesas BN1A3Q technical specifications.
General
Collector-emitter Voltage-Max
50V
DC Current Gain-Min (hFE)
80
JESD-30 Code
R-PSIP-T3
Max Collector Current
100mA
Number of Elements
1
Package Body Material
Plastic
Package Shape
Rectangular
Package Style
IN-LINEMeter
Polarity/Channel Type
PNP
Power Dissipation-Max (Abs)
250mW
Qualification Status
Not Qualified
Surface Mount
No
Terminal Form
Through Hole
Terminal Position
SINGLE
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Turn-off Time-Max (toff)
6000ns
Turn-on Time-Max (ton)
200ns
Compliance
RoHS
Not Compliant
Datasheet
Renesas BN1A3Q Datasheet
Download the complete datasheet for Renesas BN1A3Q to view detailed technical specifications.
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