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Technical Specifications
Renesas FS3KM-10A technical specifications.
General
Case Connection
Isolated
Drain Current-Max (ID)
3A
Drain-source On Resistance-Max
4.4R
DS Breakdown Voltage-Min
500V
FET Technology
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-220AB
JESD-30 Code
R-PSFM-T3
Number of Elements
1
Package Body Material
Plastic
Package Shape
Rectangular
Package Style
FLANGE MOUNTMeter
Polarity/Channel Type
N-CHANNEL
Pulsed Drain Current-Max (IDM)
9A
Qualification Status
Not Qualified
Surface Mount
No
Terminal Form
Through Hole
Terminal Position
SINGLE
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Compliance
RoHS
Not Compliant
Datasheet
Renesas FS3KM-10A Datasheet
Download the complete datasheet for Renesas FS3KM-10A to view detailed technical specifications.
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