The FS50KM-2 is a single N-channel metal-oxide semiconductor FET with a minimum breakdown voltage of 100V and a maximum drain current of 50A. The device features a maximum drain-source on resistance of 55 milliohms. It is packaged in a TO-220AB flange mount style with a plastic body and a rectangular shape. The FET is suitable for switching applications and is not qualified according to JEDEC-95 Code TO-220AB and JESD-30 Code R-PSFM-T3.
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Technical Specifications
Renesas FS50KM-2 technical specifications.
General
| Case Connection | Isolated |
| Drain Current-Max (ID) | 50A |
| Drain-source On Resistance-Max | 55mR |
| DS Breakdown Voltage-Min | 100V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 Code | TO-220AB |
| JESD-30 Code | R-PSFM-T3 |
| Number of Elements | 1 |
| Package Body Material | Plastic |
| Package Shape | Rectangular |
| Package Style | FLANGE MOUNTMeter |
| Polarity/Channel Type | N-CHANNEL |
| Pulsed Drain Current-Max (IDM) | 200A |
| Qualification Status | Not Qualified |
| Surface Mount | No |
| Terminal Form | Through Hole |
| Terminal Position | SINGLE |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
Compliance
| RoHS | Not Compliant |
Datasheet
Renesas FS50KM-2 Datasheet
Download the complete datasheet for Renesas FS50KM-2 to view detailed technical specifications.
No datasheet is available for this part.