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Technical Specifications
Renesas FS50KMJ-06F technical specifications.
General
Case Connection
Isolated
Drain Current-Max (Abs) (ID)
50A
Drain Current-Max (ID)
50A
Drain-source On Resistance-Max
18mR
DS Breakdown Voltage-Min
60V
FET Technology
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-220AB
JESD-30 Code
R-PSFM-T3
Max Operating Temperature
150°C
Number of Elements
1
Package Body Material
Plastic
Package Shape
Rectangular
Package Style
FLANGE MOUNTMeter
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (Abs)
25W
Pulsed Drain Current-Max (IDM)
200A
Qualification Status
Not Qualified
Surface Mount
No
Terminal Form
Through Hole
Terminal Position
SINGLE
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Compliance
RoHS
Not Compliant
Datasheet
Renesas FS50KMJ-06F Datasheet
Download the complete datasheet for Renesas FS50KMJ-06F to view detailed technical specifications.
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