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Technical Specifications
Renesas FX20KMJ-3 technical specifications.
General
Case Connection
Isolated
Drain Current-Max (ID)
20A
Drain-source On Resistance-Max
320mR
DS Breakdown Voltage-Min
150V
FET Technology
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-220AB
JESD-30 Code
R-PSFM-T3
Number of Elements
1
Package Body Material
Plastic
Package Shape
Rectangular
Package Style
FLANGE MOUNTMeter
Polarity/Channel Type
P-CHANNEL
Pulsed Drain Current-Max (IDM)
80A
Qualification Status
Not Qualified
Surface Mount
No
Terminal Form
Through Hole
Terminal Position
SINGLE
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Compliance
RoHS
Not Compliant
Datasheet
Renesas FX20KMJ-3 Datasheet
Download the complete datasheet for Renesas FX20KMJ-3 to view detailed technical specifications.
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