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Technical Specifications
Renesas FY4AEJ-03 technical specifications.
General
| Drain Current-Max (ID) | 4A |
| Drain-source On Resistance-Max | 30mR |
| DS Breakdown Voltage-Min | 30V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 Code | R-PDSO-G8 |
| Number of Elements | 2 |
| Package Body Material | Plastic |
| Package Shape | Rectangular |
| Package Style | SMALL OUTLINEMeter |
| Polarity/Channel Type | N-CHANNEL, P-CHANNEL |
| Pulsed Drain Current-Max (IDM) | 28A |
| Qualification Status | Not Qualified |
| Surface Mount | Yes |
| Terminal Form | Gull Wing |
| Terminal Position | DUAL |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
Compliance
| RoHS | Not Compliant |
Datasheet
Renesas FY4AEJ-03 Datasheet
Download the complete datasheet for Renesas FY4AEJ-03 to view detailed technical specifications.
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