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Technical Specifications
Renesas GA1L4M technical specifications.
General
| DC Current Gain-Min (hFE) | 85 |
| Max Collector Current | 100mA |
| Number of Elements | 1 |
| Polarity/Channel Type | NPN |
| Power Dissipation-Max (Abs) | 150mW |
| Surface Mount | Yes |
| Transistor Element Material | SILICON |
Compliance
| RoHS | Not Compliant |
Datasheet
Renesas GA1L4M Datasheet
Download the complete datasheet for Renesas GA1L4M to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.