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Technical Specifications
Renesas GN1F4M technical specifications.
General
DC Current Gain-Min (hFE)
60
Max Collector Current
100mA
Number of Elements
1
Polarity/Channel Type
PNP
Power Dissipation-Max (Abs)
150mW
Surface Mount
Yes
Transistor Element Material
SILICON
Compliance
RoHS
Not Compliant
Datasheet
Renesas GN1F4M Datasheet
Download the complete datasheet for Renesas GN1F4M to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.