N-channel silicon MOSFET featuring a 250V drain-source breakdown voltage and a maximum continuous drain current of 30A, with a pulsed drain current capability of 120A. This component offers a low maximum on-resistance of 69mR and a maximum power dissipation of 150W. Designed for switching applications, it utilizes metal-oxide semiconductor FET technology and is housed in a 3-pin TO-3P package with a plastic body and copper terminals for through-hole mounting. Operating up to 150°C, this RoHS compliant component is moisture sensitive level 1.
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Technical Specifications
Renesas H5N2509P-E technical specifications.
General
| Case Connection | DRAIN |
| Drain Current-Max (Abs) (ID) | 30A |
| Drain Current-Max (ID) | 30A |
| Drain-source On Resistance-Max | 69mR |
| DS Breakdown Voltage-Min | 250V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 Code | R-PSFM-T3 |
| JESD-609 Code | e2 |
| Max Operating Temperature | 150°C |
| Moisture Sensitivity Level | 1 |
| Number of Elements | 1 |
| Package Body Material | Plastic |
| Package Shape | Rectangular |
| Package Style | FLANGE MOUNTMeter |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 150W |
| Pulsed Drain Current-Max (IDM) | 120A |
| Qualification Status | Not Qualified |
| RoHS Compliant | Yes |
| Surface Mount | No |
| Terminal Finish | Copper |
| Terminal Form | Through Hole |
| Terminal Position | SINGLE |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
Compliance
| RoHS | Compliant |
Datasheet
Renesas H5N2509P-E Datasheet
Download the complete datasheet for Renesas H5N2509P-E to view detailed technical specifications.
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