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Technical Specifications
Renesas H5N2522FP-E0-E#T2 technical specifications.
General
| Drain Current-Max (Abs) (ID) | 12A |
| Drain Current-Max (ID) | 12A |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Max Operating Temperature | 150°C |
| Number of Elements | 1 |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 35W |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Surface Mount | No |
Compliance
| RoHS | Compliant |
Datasheet
Renesas H5N2522FP-E0-E#T2 Datasheet
Download the complete datasheet for Renesas H5N2522FP-E0-E#T2 to view detailed technical specifications.
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