N-channel enhancement mode power MOSFET featuring a 300V drain-source voltage and 15A continuous drain current. This single-element transistor is housed in a TO-220FN package with 3 pins and a tab, designed for through-hole mounting. Key specifications include a maximum gate-source voltage of ±30V, 160mΩ drain-source resistance at 10V, and 81nC typical gate charge. The plastic package measures 10mm x 4.5mm x 15mm, with a seated plane height of 18.6mm and a 2.54mm pin pitch. Maximum power dissipation is 35W, with an operating temperature range of -55°C to 150°C.
PackageTO-220FN
MountingThrough Hole
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Technical Specifications
Renesas H5N3007FN technical specifications.
General
| Package Family Name | TO-220 |
| Package/Case | TO-220FN |
| Pin Count | 3 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 10 |
| Package Width (mm) | 4.5 |
| Package Height (mm) | 15 |
| Seated Plane Height (mm) | 18.6 |
| Pin Pitch (mm) | 2.54 |
| Package Material | Plastic |
| Mounting | Through Hole |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 300V |
| Maximum Gate Source Voltage | ±30V |
| Maximum Continuous Drain Current | 15A |
| Material | Si |
| Maximum Drain Source Resistance | 160@10VmOhm |
| Typical Gate Charge @ Vgs | 81@10VnC |
| Typical Gate Charge @ 10V | 81nC |
| Typical Input Capacitance @ Vds | 2180@25VpF |
| Maximum Power Dissipation | 35000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | SAN34 |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
Datasheet
Renesas H5N3007FN Datasheet
Download the complete datasheet for Renesas H5N3007FN to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.