P-channel MOSFET featuring a 100V drain-source breakdown voltage and a maximum continuous drain current of 15A. This single element transistor offers a maximum on-resistance of 150mΩ and a pulsed drain current capability of 60A. Designed for switching applications, it operates within a temperature range up to 150°C and is housed in a TO-251 package with through-hole mounting. The component is RoHS and REACH SVHC compliant, with tin terminal finish.
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Technical Specifications
Renesas H7P1002DL-E technical specifications.
General
Case Connection
DRAIN
Drain Current-Max (Abs) (ID)
15A
Drain Current-Max (ID)
15A
Drain-source On Resistance-Max
150mR
DS Breakdown Voltage-Min
100V
Feedback Cap-Max (Crss)
120pF
FET Technology
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code
R-PSIP-T3
JESD-609 Code
e6
Max Operating Temperature
150°C
Moisture Sensitivity Level
1
Number of Elements
1
Package Body Material
Plastic
Package Shape
Rectangular
Package Style
IN-LINEMeter
Polarity/Channel Type
P-CHANNEL
Power Dissipation-Max (Abs)
30W
Pulsed Drain Current-Max (IDM)
60A
Qualification Status
Not Qualified
Reach SVHC Compliant
Yes
RoHS Compliant
Yes
Surface Mount
No
Terminal Finish
Tin
Terminal Form
Through Hole
Terminal Position
SINGLE
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Compliance
RoHS
Compliant
Datasheet
Renesas H7P1002DL-E Datasheet
Download the complete datasheet for Renesas H7P1002DL-E to view detailed technical specifications.
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