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Technical Specifications
Renesas H7P1002DS-E technical specifications.
General
| Case Connection | DRAIN |
| Drain Current-Max (ID) | 15A |
| Drain-source On Resistance-Max | 150mR |
| DS Breakdown Voltage-Min | 100V |
| Feedback Cap-Max (Crss) | 120pF |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 Code | R-PSSO-G2 |
| Max Operating Temperature | 150°C |
| Number of Elements | 1 |
| Package Body Material | Plastic |
| Package Shape | Rectangular |
| Package Style | SMALL OUTLINEMeter |
| Polarity/Channel Type | P-CHANNEL |
| Power Dissipation-Max (Abs) | 30W |
| Pulsed Drain Current-Max (IDM) | 60A |
| Reach SVHC Compliant | Yes |
| Surface Mount | Yes |
| Terminal Form | Gull Wing |
| Terminal Position | SINGLE |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
Compliance
| RoHS | Compliant |
Datasheet
Renesas H7P1002DS-E Datasheet
Download the complete datasheet for Renesas H7P1002DS-E to view detailed technical specifications.
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