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Technical Specifications
Renesas HAF1009S technical specifications.
General
Case Connection
DRAIN
Drain Current-Max (ID)
40A
Drain-source On Resistance-Max
50mR
DS Breakdown Voltage-Min
60V
FET Technology
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code
R-PSSO-G2
Number of Elements
1
Package Body Material
Plastic
Package Shape
Rectangular
Package Style
SMALL OUTLINEMeter
Polarity/Channel Type
P-CHANNEL
Pulsed Drain Current-Max (IDM)
80A
Qualification Status
Not Qualified
Surface Mount
Yes
Terminal Form
Gull Wing
Terminal Position
SINGLE
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Compliance
RoHS
Not Compliant
Datasheet
Renesas HAF1009S Datasheet
Download the complete datasheet for Renesas HAF1009S to view detailed technical specifications.
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