P-Channel Power MOSFET featuring 60V drain-source breakdown voltage and a maximum continuous drain current of 5A. This silicon transistor offers a low drain-source on-resistance of 340mΩ, ideal for switching applications. It operates with a maximum power dissipation of 2.5W and a peak reflow temperature of 240°C. The component is housed in a rectangular, surface-mount SOP-8 package with gull-wing terminals and a 1.27mm pitch.
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Technical Specifications
Renesas HAF1010RJ technical specifications.
General
Drain Current-Max (Abs) (ID)
5A
Drain Current-Max (ID)
5A
Drain-source On Resistance-Max
340mR
DS Breakdown Voltage-Min
60V
FET Technology
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code
R-PDSO-G8
JESD-609 Code
e0
Max Operating Temperature
150°C
Number of Elements
1
Package Body Material
Plastic
Package Shape
Rectangular
Package Style
SMALL OUTLINEMeter
Peak Reflow Temperature (Cel)
240°C
Polarity/Channel Type
P-CHANNEL
Power Dissipation-Max (Abs)
2.5W
Pulsed Drain Current-Max (IDM)
10A
Qualification Status
Not Qualified
RoHS Compliant
No
Surface Mount
Yes
Terminal Finish
Tin
Terminal Form
Gull Wing
Terminal Position
DUAL
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Compliance
RoHS
Not Compliant
Datasheet
Renesas HAF1010RJ Datasheet
Download the complete datasheet for Renesas HAF1010RJ to view detailed technical specifications.
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