P-Channel Power MOSFET featuring 60V drain-source breakdown voltage and a maximum continuous drain current of 5A. This silicon transistor offers a low drain-source on-resistance of 340mΩ, ideal for switching applications. It operates with a maximum power dissipation of 2.5W and a peak reflow temperature of 240°C. The component is housed in a rectangular, surface-mount SOP-8 package with gull-wing terminals and a 1.27mm pitch.
Renesas HAF1010RJ technical specifications.
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