Quick Jump:
Technical Specifications
Renesas HAF1010RJ-EL-E technical specifications.
General
Drain Current-Max (ID)
5A
Drain-source On Resistance-Max
340mR
DS Breakdown Voltage-Min
60V
FET Technology
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code
R-PDSO-G8
Number of Elements
1
Package Body Material
Plastic
Package Shape
Rectangular
Package Style
SMALL OUTLINEMeter
Polarity/Channel Type
P-CHANNEL
Power Dissipation-Max (Abs)
2.5W
Pulsed Drain Current-Max (IDM)
10A
Reach SVHC Compliant
Yes
RoHS Compliant
Yes
Surface Mount
Yes
Terminal Form
Gull Wing
Terminal Position
DUAL
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Compliance
RoHS
Compliant
Datasheet
Renesas HAF1010RJ-EL-E Datasheet
Download the complete datasheet for Renesas HAF1010RJ-EL-E to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.