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Technical Specifications
Renesas HAF2001 technical specifications.
General
Case Connection
DRAIN
Drain Current-Max (ID)
20A
Drain-source On Resistance-Max
65mR
DS Breakdown Voltage-Min
60V
FET Technology
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-220AB
JESD-30 Code
R-PSFM-T3
Number of Elements
1
Package Body Material
Plastic
Package Shape
Rectangular
Package Style
FLANGE MOUNTMeter
Polarity/Channel Type
N-CHANNEL
Pulsed Drain Current-Max (IDM)
40A
Qualification Status
Not Qualified
Surface Mount
No
Terminal Form
Through Hole
Terminal Position
SINGLE
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Compliance
RoHS
Not Compliant
Datasheet
Renesas HAF2001 Datasheet
Download the complete datasheet for Renesas HAF2001 to view detailed technical specifications.
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