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Technical Specifications
Renesas HAT1043M technical specifications.
General
Drain Current-Max (Abs) (ID)
4.4A
Drain Current-Max (ID)
4.4A
Drain-source On Resistance-Max
110mR
DS Breakdown Voltage-Min
20V
FET Technology
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code
R-PDSO-G6
Max Operating Temperature
150°C
Number of Elements
1
Package Body Material
Plastic
Package Shape
Rectangular
Package Style
SMALL OUTLINEMeter
Polarity/Channel Type
P-CHANNEL
Power Dissipation-Max (Abs)
1.05W
Pulsed Drain Current-Max (IDM)
17.6A
Qualification Status
Not Qualified
Surface Mount
Yes
Terminal Form
Gull Wing
Terminal Position
DUAL
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Compliance
RoHS
Not Compliant
Datasheet
Renesas HAT1043M Datasheet
Download the complete datasheet for Renesas HAT1043M to view detailed technical specifications.
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