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Technical Specifications
Renesas HAT1126R technical specifications.
General
Drain Current-Max (ID)
6A
Drain-source On Resistance-Max
85mR
DS Breakdown Voltage-Min
60V
FET Technology
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code
R-PDSO-G8
Number of Elements
2
Package Body Material
Plastic
Package Shape
Rectangular
Package Style
SMALL OUTLINEMeter
Polarity/Channel Type
P-CHANNEL
Pulsed Drain Current-Max (IDM)
48A
Qualification Status
Not Qualified
Surface Mount
Yes
Terminal Form
Gull Wing
Terminal Position
DUAL
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Compliance
RoHS
Not Compliant
Datasheet
Renesas HAT1126R Datasheet
Download the complete datasheet for Renesas HAT1126R to view detailed technical specifications.
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