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Technical Specifications
Renesas HAT1126RJ-EL-E technical specifications.
General
Drain Current-Max (Abs) (ID)
6A
Drain Current-Max (ID)
6A
FET Technology
METAL-OXIDE SEMICONDUCTOR
Max Operating Temperature
150°C
Moisture Sensitivity Level
1
Number of Elements
1
Peak Reflow Temperature (Cel)
260°C
Polarity/Channel Type
P-CHANNEL
Power Dissipation-Max (Abs)
2W
Reach SVHC Compliant
Yes
RoHS Compliant
Yes
Surface Mount
Yes
Time @ Peak Reflow Temperature-Max (s)
20s
Compliance
RoHS
Compliant
Datasheet
Renesas HAT1126RJ-EL-E Datasheet
Download the complete datasheet for Renesas HAT1126RJ-EL-E to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.