Renesas HAT1126RJ-EL-E technical specifications.
| Drain Current-Max (Abs) (ID) | 6A |
| Drain Current-Max (ID) | 6A |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Max Operating Temperature | 150°C |
| Moisture Sensitivity Level | 1 |
| Number of Elements | 1 |
| Peak Reflow Temperature (Cel) | 260°C |
| Polarity/Channel Type | P-CHANNEL |
| Power Dissipation-Max (Abs) | 2W |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Surface Mount | Yes |
| Time @ Peak Reflow Temperature-Max (s) | 20s |
| RoHS | Compliant |
Download the complete datasheet for Renesas HAT1126RJ-EL-E to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.