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Technical Specifications
Renesas HAT2016R technical specifications.
General
Drain Current-Max (ID)
6.5A
Drain-source On Resistance-Max
80mR
DS Breakdown Voltage-Min
30V
FET Technology
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
MS-012AA
JESD-30 Code
R-PDSO-G8
Number of Elements
2
Package Body Material
Plastic
Package Shape
Rectangular
Package Style
SMALL OUTLINEMeter
Polarity/Channel Type
N-CHANNEL
Pulsed Drain Current-Max (IDM)
52A
Qualification Status
Not Qualified
Surface Mount
Yes
Terminal Form
Gull Wing
Terminal Position
DUAL
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Compliance
RoHS
Not Compliant
Datasheet
Renesas HAT2016R Datasheet
Download the complete datasheet for Renesas HAT2016R to view detailed technical specifications.
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