
N-channel MOSFET with 60V drain-source breakdown voltage and 5A maximum drain current. Features 84mΩ maximum drain-source on-resistance and 40A pulsed drain current. Designed for switching applications, this component utilizes metal-oxide semiconductor FET technology and is housed in an 8-pin small outline package (R-PDSO-G8) with gull-wing terminals. Maximum power dissipation is 3W, with a maximum operating temperature of 150°C and a peak reflow temperature of 260°C for 20 seconds. RoHS compliant and surface mountable.
Renesas HAT2038R-EL-E technical specifications.
Download the complete datasheet for Renesas HAT2038R-EL-E to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
