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Technical Specifications
Renesas HAT2114R technical specifications.
General
Drain Current-Max (Abs) (ID)
6A
Drain Current-Max (ID)
6A
Drain-source On Resistance-Max
50mR
DS Breakdown Voltage-Min
60V
FET Technology
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code
R-PDSO-G8
Max Operating Temperature
150°C
Number of Elements
2
Package Body Material
Plastic
Package Shape
Rectangular
Package Style
SMALL OUTLINEMeter
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (Abs)
3W
Pulsed Drain Current-Max (IDM)
48A
Qualification Status
Not Qualified
Surface Mount
Yes
Terminal Form
Gull Wing
Terminal Position
DUAL
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Compliance
RoHS
Not Compliant
Datasheet
Renesas HAT2114R Datasheet
Download the complete datasheet for Renesas HAT2114R to view detailed technical specifications.
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