N-channel MOSFET transistor designed for switching applications. Features a maximum drain current of 55A (55A absolute) and a minimum drain-source breakdown voltage of 30V. Operates with a maximum power dissipation of 30W and a pulsed drain current up to 220A. This surface-mount component utilizes METAL-OXIDE SEMICONDUCTOR FET technology, housed in a rectangular plastic small outline package with gull wing terminals. It is RoHS compliant and rated for a maximum operating temperature of 150°C.
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Technical Specifications
Renesas HAT2165N-EL-E technical specifications.
General
Drain Current-Max (Abs) (ID)
55A
Drain Current-Max (ID)
55A
DS Breakdown Voltage-Min
30V
FET Technology
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code
R-PDSO-G8
JESD-609 Code
e4
Max Operating Temperature
150°C
Moisture Sensitivity Level
1
Number of Elements
1
Package Body Material
Plastic
Package Shape
Rectangular
Package Style
SMALL OUTLINEMeter
Peak Reflow Temperature (Cel)
260°C
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (Abs)
30W
Pulsed Drain Current-Max (IDM)
220A
Qualification Status
Not Qualified
RoHS Compliant
Yes
Surface Mount
Yes
Terminal Finish
Gold
Terminal Form
Gull Wing
Terminal Position
DUAL
Time @ Peak Reflow Temperature-Max (s)
20s
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Compliance
RoHS
Compliant
Datasheet
Renesas HAT2165N-EL-E Datasheet
Download the complete datasheet for Renesas HAT2165N-EL-E to view detailed technical specifications.
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