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Technical Specifications
Renesas HAT2167H technical specifications.
General
Case Connection
DRAIN
Drain Current-Max (ID)
40A
Drain-source On Resistance-Max
9.3mR
DS Breakdown Voltage-Min
30V
FET Technology
METAL-OXIDE SEMICONDUCTOR
Number of Elements
1
Package Body Material
Plastic
Package Shape
Rectangular
Package Style
SMALL OUTLINEMeter
Polarity/Channel Type
N-CHANNEL
Pulsed Drain Current-Max (IDM)
160A
Qualification Status
Not Qualified
RoHS Compliant
No
Surface Mount
Yes
Terminal Form
Gull Wing
Terminal Position
SINGLE
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Compliance
RoHS
Not Compliant
Datasheet
Renesas HAT2167H Datasheet
Download the complete datasheet for Renesas HAT2167H to view detailed technical specifications.
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