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Technical Specifications
Renesas HAT2168N-EL-E technical specifications.
General
Drain Current-Max (Abs) (ID)
30A
Drain Current-Max (ID)
30A
DS Breakdown Voltage-Min
30V
FET Technology
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code
R-PDSO-G8
JESD-609 Code
e4
Max Operating Temperature
150°C
Number of Elements
1
Package Body Material
Plastic
Package Shape
Rectangular
Package Style
SMALL OUTLINEMeter
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (Abs)
15W
Pulsed Drain Current-Max (IDM)
120A
Qualification Status
Not Qualified
RoHS Compliant
Yes
Surface Mount
Yes
Terminal Finish
Nickel
Terminal Form
Gull Wing
Terminal Position
DUAL
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Compliance
RoHS
Compliant
Datasheet
Renesas HAT2168N-EL-E Datasheet
Download the complete datasheet for Renesas HAT2168N-EL-E to view detailed technical specifications.
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