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Technical Specifications
Renesas HAT2169H technical specifications.
General
Case Connection
DRAIN
Drain Current-Max (ID)
50A
Drain-source On Resistance-Max
6mR
DS Breakdown Voltage-Min
40V
FET Technology
METAL-OXIDE SEMICONDUCTOR
Number of Elements
1
Package Body Material
Plastic
Package Shape
Rectangular
Package Style
SMALL OUTLINEMeter
Polarity/Channel Type
N-CHANNEL
Pulsed Drain Current-Max (IDM)
200A
Qualification Status
Not Qualified
RoHS Compliant
No
Surface Mount
Yes
Terminal Form
Gull Wing
Terminal Position
SINGLE
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Compliance
RoHS
Not Compliant
Datasheet
Renesas HAT2169H Datasheet
Download the complete datasheet for Renesas HAT2169H to view detailed technical specifications.
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